B.5
Log Number: 14
Abstract Submitted to the NT-99-Logo NANOTUBE-99 Workshop:

Localization in carbon nanotubes

T. Kostyrko1,2, M. Bartkowiak1,2 and G.D. Mahan1

1 University of Tennessee and Oak Ridge National Laboratory
2 Uniwersytet im. A. Mickiewicza, Poznan, Poland

Contact e-mail: tkos@dlin.ssd.ornl.gov

We analyze the influence of defects on conductance, density of states, and localization in (N,N) armchair carbon nanotubes within a tight binding model. Using the transfer matrix method, we calculate the reflection (related to the conductance) from a sequence of defects and relate its energy dependence near the Fermi level to the appearance of a quasibound state. This state is also seen in the density of states and in the energy dependence of the quasiparticle lifetime. We compute the localization length x(w) as a function of energy w. Comparison of x(0) with the mean free path L in the limit of small defect concentration c and small defect strength E leads to a simple approximate relation x(0) = 3L = 9aNt2/2cE2 (t - hopping integral, a - lattice constant).

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Last modification:   1999.07.14 (Wednesday) 11:31:49 EDT