We develop and apply low-temperature scanning probe techniques to study electrons in nanoscale systems. The techniques include Scanning Tunneling Microscopy and Charge Imaging -- a novel low temperature probe of electron accumulation. The method achieves an incredible sensitivity of 0.01 electrons per root hertz. Current projects include probing electrons in reduced dimensions in GaAs nanostructures and probing electrons and defects in thermoelectric nanostructures.

The research described on this site was funded by grants from the National Science Foundation (DMR-0305461), the MSU Institute for Quantum Sciences, the MSU Center for Fundamental Materials Research, and the Alfred P. Sloan Foundation.


Stuart Tessmer, last modified 6-17-2004.