Khang Hoang

 

Current Mailing Address:

University of California

Materials Department, College of Engineering

Santa Barbara, CA 93106-5050

 

Phone: (805) 893-2799

E-mail: hoang [AT] engineering.ucsb.edu

 

Research

My research is to understand fundamental properties of complex materials using advanced numerical techniques such as density-functional theory, Monte-Carlo simulation, and (quantum mechanical) molecular dynamics. I am currently working with Prof. Chris Van de Walle at the University of California-Santa Barbara (UCSB). My Ph.D. studies were with Prof. S. D. Mahanti at Michigan State University (MSU).

Current/recent research projects: (1) Hydrogen storage materials. (2) Monte Carlo simulation of charge ordering in a fcc Coulomb lattice gas. (3) Ab initio studies of atomic and electronic structures of ternary and quaternary narrow band-gap semiconductors (with focus on thermoelectric applications). (4) Theory of defects in narrow band-gap semiconductors (bulk, films, and nanoclusters). (5) Clustering and nanostructure formation in bulk thermoelectric materials.

Partial charge density associated with (a) hyper-deep and (b) deep defect states created by an In substitutional impurity in PbTe. These are bonding and anti-bonding states of In s and Te p orbitals.

Highlights

(from our recent publications)

 

Partial charge density associated with defect states created by Te vacancies in PbTe thin films; see PRB 76, 115432 (2007).

Partial charge density associated with defect states created by (a) Pb and (b) Te vacancies in PbTe; see PRB 76, 115432 (2007).

 

Publications

1.      K. Hoang and S. D. Mahanti, “Atomic and electronic structures of thallium-based III-V-VI2 ternary chalcogenides: Ab initio calculations,” Physical Review B 77, 205107 (2008).

2.      L.-H. Ye, K. Hoang, A. J. Freeman, S. D. Mahanti, J. He, T. M. Tritt, and M. G. Kanatzidis, “First principles study of the electronic, optical and lattice vibrational properties of AgSbTe2,” Physical Review B 77, 245203 (2008).

3.      K. Hoang and S. D. Mahanti, “Electronic structure of Ga, In, and Tl doped PbTe: A detailed study of the impurity bands,” Physical Review B (under review).

4.      M.-K. Han, K. Hoang, H. Kong, P. Pcionek, C. Uher, K. M. Paraskevopoulos, S. D. Mahanti, and M. G. Kanatzidis, “Substitution of Bi for Sb and its role in the thermoelectric properties and nanostructuring in Ag1-xPb18MTe20 (M=Bi, Sb),” Chemistry of Materials 20, 3512 (2008).

5.      K. Hoang, S. D. Mahanti, J. R. Salvador, and M. G. Kanatzidis, “Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides,Physical Review Letters 99, 156403 (2007). PDF  See also: L.-H. Ye et al. (sx-LDA calculations), Jovovic and Heremans (Fermi surface measurements), Barabash et al. (first-principles cluster expansion)

6.      K. Hoang, S. D. Mahanti, and P. Jena, “Theoretical study of deep-defect states in bulk PbTe and in thin films,” Physical Review B 76, 115432 (2007). PDF

7.      S. D. Mahanti, K. Hoang, and S. Ahmad, “Deep defect states in narrow band-gap semiconductors,” Physica B 401-402C, 291 (2007).  PDF

8.      J. R. Salvador, K. Hoang, S. D. Mahanti, and M. G. Kanatzidis, “REAu2In4 (RE = La, Ce, Pr, and Nd): Polyindides from liquid Indium,” Inorganic Chemistry 46, 6933 (2007). PDF

9.      S. Ahmad, S. D. Mahanti, K. Hoang, and M. G. Kanatzidis, “Ab initio studies of the electronic structure of defects in PbTe,” Physical Review B 74, 155205 (2006). PDF

10.  S. Ahmad, K. Hoang, and S. D. Mahanti, “Ab initio  study of deep defect states in narrow band-gap semiconductors:  Group III impurities in PbTe,Physical Review Letters 96, 056403 (2006). PDF

11.  K. Hoang, K. Desai, and S. D. Mahanti, “Charge ordering and self-assembled nanostructures in a fcc Coulomb lattice gas,Physical Review B 72, 064102 (2005); selected for the Virtual Journal of Nanoscale Science and Technology 12 (August 15, 2005). PDF

 

             Conference Proceedings

1.      S. D. Mahanti, K. Hoang, and S. Ahmad, “Atomic ordering, electronic structure, and transport properties of LAST-m systems,” in Thermoelectric Power Generation, edited by T.P. Hogan, J. Yang, R. Funahashi, and T. Tritt (Mater. Res. Soc. Symp. Proc. 1044, Warrendale, PA, 2007), 1044-U04-06 (invited).

2.      K. Hoang and S. D. Mahanti, “Defect clustering and nanostructure formation in PbTe-based bulk thermoelectrics,” in Thermoelectric Power Generation, edited by T.P. Hogan, J. Yang, R. Funahashi, and T. Tritt (Mater. Res. Soc. Symp. Proc. 1044, Warrendale, PA, 2007), 1044-U02-08.

3.      K. Hoang, S. D. Mahanti, J. Androulakis, and M. G. Kanatzidis, “Electronic structure of AgPbmSbTem+2 compounds – Implications on thermoelectric properties,”  in Materials and Technologies for Direct Thermal-to-Electric Energy Conversion, edited by J. Yang, T.P. Hogan, R. Runahashi, and G.S. Nolas (Mater. Res. Soc. Symp. Proc. 886, Warrendale, PA, 2006), 0886-F05-06.

4.       H. Khang, S. D. Mahanti, B. K. Rao, and P. Jena, “Magnetic and thermal properties of interacting (MnxN) clusters,” in Clusters and Nano-Assemblies: Physical and Biological Systems, edited by P. Jena, S. N. Khanna, and B. K. Rao,  World Scientific, Singapore, 2005), p. 231.

Others

Ph.D. Thesis: “Atomic and electronic structures of novel ternary and quaternary narrow band-gap semiconductors” (200 pages [sorry, couldn’t make it shorter!]; may be available online in the future). ABSTRACT

B.Sc. Thesis [in Vietnamese]: “Độ tái chuẩn hóa khe dải trong giếng lượng tử trong gần đúng lưỡng cực plasmon” (Double plasmon-pole approximation for semiconductor quantum wells at finite temperatures). PDF

* * *

Picture in the backrgound: partial charge density associated the defect states created by Te vacancy in PbTe;

see, PRB 76, 115432 (2007).

 

Old pages: links, photos, other interests

(Some links on these pages are dead. Sorry for that!)

 

This page was created in MS Word, best view with IE 6.0 and LCD monitor (Don’t ask me why!).

Last update: June 10, 2008

* * *

free web page
hit counter